View STB50N25M5_7547328.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. march 2012 doc id 15923 rev 3 1/14 14 STB50N25M5 n-channel 250 v, 0.065 , 28 a, mdmesh? v power mosfet in d2pak package datasheet ? production data features amongst the best r ds(on) * area high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss r ds(on) max i d STB50N25M5 250 v < 0.075 28 a 1 3 d2pak ta b !-v $or4!" ' 3 table 1. device summary order code marking package packaging STB50N25M5 50n25m5 d2pak tape and reel www.st.com
contents STB50N25M5 2/14 doc id 15923 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STB50N25M5 electrical ratings doc id 15923 rev 3 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 28 a i d drain current (continuous) at t c = 100 c 18 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 112 a p tot total dissipation at t c = 25 c 110 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 350 mj dv/dt (2) 2. i sd 28 a, di/dt 400 a/s, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.31 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w
electrical characteristics STB50N25M5 4/14 doc id 15923 rev 3 2 electrical characteristics (tcase =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 250 v i dss zero gate voltage drain current (v gs = 0) v ds = 250 v v ds = 250 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 14 a 0.065 0.075 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1700 100 15 - pf pf pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 80% v (br)dss -89-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related v gs = 0, v ds = 0 to 80% v (br)dss -171-pf r g gate input resistance f=1 mhz open drain - 1.8 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 200 v, i d = 28 a, v gs = 10 v (see figure 15) - 44 10 23 - nc nc nc
STB50N25M5 electrical characteristics doc id 15923 rev 3 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 125 v, i d = 14 a, r g = 4.7 , v gs = 10 v (see figure 14) - 16 44 35 20 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 28 112 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 28 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 28 a, di/dt = 100 a/s v dd = 60 v, t j = 25 c (see figure 16) - 174 1.5 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 28 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 16) - 195 2 20 ns c a
electrical characteristics STB50N25M5 6/14 doc id 15923 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 96 8 v1 i d 3 0 20 10 0 0 10 v d s (v) 20 (a) 5 15 25 40 50 5v 6v 7v v g s =10v 3 0 am0 3 969v1 i d 3 0 20 10 0 0 4 v g s (v) 8 (a) 2 6 10 40 50 v d s =20v am0 3 970v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 r d s (on) 0.070 0.065 0.060 0.055 0 10 i d (a) ( ) 5 25 15 20 v g s =10v am0 3 972v1
STB50N25M5 electrical characteristics doc id 15923 rev 3 7/14 figure 8. output capacitance stored energy figure 9. capacitance variations figure 10. gate charge vs gate-source voltage figure 11. normalized on-resistance vs temperature figure 12. normalized gate threshold voltage vs temperature figure 13. source-drain diode forward characteristics e o ss 1.0 0.5 0 0 50 v d s (v) ( j) 200 100 150 1.5 250 2.0 2.5 am04951v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 3 97 3 v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =200v i d =2 8 a 50 12 v d s v g s am0 3 974v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d =14a v g s =10v am0 3 976v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =100 a am0 3 975v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =25c t j =150c am0 3 97 8 v1
test circuits STB50N25M5 8/14 doc id 15923 rev 3 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STB50N25M5 package mechanical data doc id 15923 rev 3 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB50N25M5 10/14 doc id 15923 rev 3 figure 20. d2pak (to-263) drawing figure 21. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
STB50N25M5 packaging mechanical data doc id 15923 rev 3 11/14 5 packaging mechanical data table 9. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data STB50N25M5 12/14 doc id 15923 rev 3 figure 22. tape for d2pak (to-263) figure 23. reel for d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STB50N25M5 revision history doc id 15923 rev 3 13/14 6 revision history table 10. document revision history date revision changes 23-jun-2009 1 first release 15-mar-2012 2 section 4: package mechanical data has been updated. minor text changes. 28-mar-2012 3 figure 7: static drain-source on-resistance has been updated.
STB50N25M5 14/14 doc id 15923 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STB50N25M5

	To Download STB50N25M5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .